Founded in 1973 as a company manufacturing germanium transistors, since 20 years is specialized in the production of detectors for infrared.
GPD works with a quality system based on MIL-45208 and MIL-S-19500; all the products are tested as the MIL-STD-883, MIL-D-24620.

The current production is based on:

  Ge Photodiodes: small and large Diameter (100µm to 25mm), 800nm to 1800nm spectral response, single and dual stage thermoelectric cooling, quadrant photodiodes

  Ge Avalanche Photodiodes: small diameter (40µm), 800nm to 1800nm spectral response, linear and geiger mode operation, thermoelectric cooling available, fiber pigtail

  High Speed InGaAs Photodiodes: small diameter (60µm to 300µm), low capacitance for high speed (2.5 GHz)

Large Area InGaAs Photodiodes: active diameter (0.5mm to 5mm), high shunt resistance for high sensitivity, multiple lens selection, optical filters

  Extended InGaAs Photodiodes: active diameter (0.3mm to 3mm), cutoff wavelength (1.9µm, 2.05µm, 2.2µm and 2.6µm)

  InGaAs Avalanche Photodiodes (APD): active diameter (80µm to 350µm), 900nm to 1650nm spectral response, low dark current for high sensitivity

  InGaAs Thermoelectric Cooled Photodiodes: active area (0.3mm to 5mm), single stage or dual stage TE cooler, cutoff wavelength (1.7µm, 1.9µm, 2.05µm, 2.2µm and 2.6µm)

  InGaAs Quadrant Photodiodes: active diameter (0.5mm, 1.0mm, 1.5mm, 2.0mm and 3.0mm), low dark current

  Two-Color Sandwich Photodiodes: Si over InGaAs (1.7µm, 2.05µm, 2.2µm or 2.6µm), InGaAs (1.7µm) over InGaAs (1.7µm, 2.05µm, 2.2µm and 2.6µm)

  InGaAs VIS/NIR Photodiodes: active diameter (300 µm to 5 mm), 0.5 µm to 1.7 µm spectral response

  Linear Arrays: 4, 8, 12, or 16 element monolithic linear array, 250 µm pitch, 80 µm diameter for high speed and low dark current

  Low Polarization Dependent Loss (PDL) InGaAs Photodiodes: Area independent (0.3 to 5 mm diameter), low polarization dependent response

  More info to the GPD Optoelectronics Corp. web site