Raylase
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Lumentum
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GPD Optoelectronics Corp.
Trinamix
Centronic
PiezosystemJena
Deltronic-Isowave
GPD Optoelectronics Corp.
GPD Optoelectronics Corp.
InGaAs detectors, small and large area, Germanium detectors, PIN and APDs

Founded in 1973 as a company manufacturing germanium transistors, since 20 years is specialized in the production of detectors for infrared.
GPD works with a quality system based on MIL-45208 and MIL-S-19500; all the products are tested as the MIL-STD-883, MIL-D-24620.

The current production is based on:

  Ge Photodiodes: small and large Diameter (100µm to 25mm), 800nm to 1800nm spectral response, single and dual stage thermoelectric cooling, quadrant photodiodes

  Ge Avalanche Photodiodes: small diameter (40µm), 800nm to 1800nm spectral response, linear and geiger mode operation, thermoelectric cooling available, fiber pigtail

  High Speed InGaAs Photodiodes: small diameter (60µm to 300µm), low capacitance for high speed (2.5 GHz)

Large Area InGaAs Photodiodes: active diameter (0.5mm to 5mm), high shunt resistance for high sensitivity, multiple lens selection, optical filters

  Extended InGaAs Photodiodes: active diameter (0.3mm to 3mm), cutoff wavelength (1.9µm, 2.05µm, 2.2µm and 2.6µm)

  InGaAs Avalanche Photodiodes (APD): active diameter (80µm to 350µm), 900nm to 1650nm spectral response, low dark current for high sensitivity

  InGaAs Thermoelectric Cooled Photodiodes: active area (0.3mm to 5mm), single stage or dual stage TE cooler, cutoff wavelength (1.7µm, 1.9µm, 2.05µm, 2.2µm and 2.6µm)

  InGaAs Quadrant Photodiodes: active diameter (0.5mm, 1.0mm, 1.5mm, 2.0mm and 3.0mm), low dark current

  Two-Color Sandwich Photodiodes: Si over InGaAs (1.7µm, 2.05µm, 2.2µm or 2.6µm), InGaAs (1.7µm) over InGaAs (1.7µm, 2.05µm, 2.2µm and 2.6µm)

  InGaAs VIS/NIR Photodiodes: active diameter (300 µm to 5 mm), 0.5 µm to 1.7 µm spectral response

  Linear Arrays: 4, 8, 12, or 16 element monolithic linear array, 250 µm pitch, 80 µm diameter for high speed and low dark current

  Low Polarization Dependent Loss (PDL) InGaAs Photodiodes: Area independent (0.3 to 5 mm diameter), low polarization dependent response


  More info to the GPD Optoelectronics Corp. web site

Manx
Ge Photodiodes
Manx
High Speed InGaAs Photodiodes
Manx
Large Area InGaAs Photodiodes
Manx
Ge Photodiodes
Manx
High Speed InGaAs Photodiodes
Manx
Large Area InGaAs Photodiodes
Manx
InGaAs Thermoelectric Cooled Photodiodes
Manx
Extended InGaAs Photodiodes
Manx
Large Area InGaAs Photodiodes
Manx
InGaAs Avalanche Photodiodes
Manx
Extended InGaAs Photodiodes
Manx
Large Area InGaAs Photodiodes
Manx
Large Area InGaAs Photodiodes