Massimo Bonfante
Representative for electro-optics
Raylase AG Manx Precision Optics Ulo Optics WZW Optic AG CVI and Melles Griot GPD Optoelectronics Corp. Vigo System Ltd Centronic Ltd
GPD Optoelectronics Corp.
GPD Optoelectronics Corp.
Germanium and InGaAs detectors
Founded in 1973 as a company manufacturing germanium transistors, since 20 years is specialized in the production of detectors for infrared.
GPD works with a quality system based on MIL-45208 and MIL-S-19500; all the products are tested as the MIL-STD-883, MIL-D-24620.
The current production is based on:
Ge Photodiodes: small and large Diameter (100µm to 25mm), 800nm to 1800nm spectral response, single and dual stage thermoelectric cooling, quadrant photodiodes
Ge Avalanche Photodiodes: small diameter (40µm), 800nm to 1800nm spectral response, linear and geiger mode operation, thermoelectric cooling available, fiber pigtail
High Speed InGaAs Photodiodes: small diameter (60µm to 300µm), low capacitance for high speed (2.5 GHz)
Large Area InGaAs Photodiodes: active diameter (0.5mm to 5mm), high shunt resistance for high sensitivity, multiple lens selection, optical filters
Extended InGaAs Photodiodes: active diameter (0.3mm to 3mm), cutoff wavelength (1.9µm, 2.05µm, 2.2µm and 2.6µm)
InGaAs Avalanche Photodiodes (APD): active diameter (80µm to 350µm), 900nm to 1650nm spectral response, low dark current for high sensitivity
InGaAs Thermoelectric Cooled Photodiodes: active area (0.3mm to 5mm), single stage or dual stage TE cooler, cutoff wavelength (1.7µm, 1.9µm, 2.05µm, 2.2µm and 2.6µm)
InGaAs Quadrant Photodiodes: active diameter (0.5mm, 1.0mm, 1.5mm, 2.0mm and 3.0mm), low dark current
Two-Color Sandwich Photodiodes: Si over InGaAs (1.7µm, 2.05µm, 2.2µm or 2.6µm), InGaAs (1.7µm) over InGaAs (1.7µm, 2.05µm, 2.2µm and 2.6µm)
InGaAs VIS/NIR Photodiodes: active diameter (300 µm to 5 mm), 0.5 µm to 1.7 µm spectral response
Linear Arrays: 4, 8, 12, or 16 element monolithic linear array, 250 µm pitch, 80 µm diameter for high speed and low dark current
Low Polarization Dependent Loss (PDL) InGaAs Photodiodes: Area independent (0.3 to 5 mm diameter), low polarization dependent response
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